features trenchfet power mosfet 175 c maximum junction temperature 100% r g tested 1 n-channel 60-v (d-s) mosfet product summary v ds (v) r ds( on) ( ) i d (a) 60 0.016 @ v gs = 10 v 40 d g s n-channel mosfet to-252 s gd top vi ew absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source v oltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 175 c) b t c = 25 c i d 40 continuous drain current (t j = 175 c) b t c = 125 c i d 30 pulsed drain current i dm 60 a continuous source current (diode conduction) i s 40 avalanche current i ar 40 repetitive a valanche energy (duty cycle 1%) l = 0.1 mh e ar 80 mj maximum power dissipation t c = 25 c p 136 b w maximum power dissipation t a = 25 c p d 3 a w operating junction and storage temperature range t j , t st g ? 55 to 175 c thermal resistance ratings parameter symbol typical maximum unit jti t abit a t 10 sec r 15 18 junction-to-ambient a steady state r thj a 40 50 c/w junction-to-case r thj c 0.85 1.1 c/w notes a. surface mounted on 1? x1? fr4 board. b. see soa curve for voltage derating. www.din-tek.jp dt u 40 n0 6
2 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ a max unit static drain-source breakdown v oltage v (br) dss v gs = 0 v, i d = 250 a 60 v gate threshold voltage v gs(t h) v ds = v gs , i d = 250 a 2.0 4.0 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 60 v, v gs = 0 v 1 zero gate voltage drain current i dss v ds = 60 v, v gs = 0 v, t j = 125 c 50 a g dss v ds = 60 v, v gs = 0 v, t j = 175 c 250 on-state drain current b i d(on) v ds = 5 v, v gs = 10 v 40 a v gs = 10 v, i d = 40 a 0.013 0.016 drain-source on-state resistance b r ds( on) v gs = 10 v, i d = 40 a, t j = 125 c 0.027 ds( on) v gs = 10 v, i d = 40 a, t j = 175 c 0.037 forward transconductance b g fs v ds = 15 v, i d = 40 a 45 s dynamic a input capacitance c iss 1960 output capacitance c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 370 pf reverse transfer capacitance c rss 200 total gate charge c q g 42 60 gate-source charge c q gs v ds = 40 v, v gs = 10 v, i d = 40 a 7 nc gate-drain charge c q gd ds , gs , d 13 gate resistance r g 0.5 2.7 turn-on delay time c t d(on) 12 20 rise time c t r v dd = 40 v, r l = 1.0 52 80 ns turn-off delay t ime c t d(of f ) v dd = 40 v , r l = 1 . 0 i d 40 a, v gen = 10 v, r g = 2.5 25 38 ns fall tim e c t f 10 15 source-drain diode ratings and characteristic (t c = 25 c) pulsed current i sm 40 a diode forward voltage b v sd i f = 40 a, v gs = 0 v 1.0 1.5 v source-drain reverse recovery time t rr i f = 40 a, di/dt = 100 a/ s 45 70 ns notes a. guaranteed by design, not subject to production testing. b. pulse test; pulse width 300 s, duty cycle 2%. c. independent of operating temperature. z z z g l q w h n m s ' 7 8 1
3 typical characteristics (25 c unless noted) 0 20 40 60 80 0 2 04 06080100 0 500 1000 1500 2000 2500 3000 0 2 04 06 08 0 output characteristics transfer characteristics capacitance gate charge t ransconductance on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) ? on-resistance ( q g ? total gate charge (nc) i d ? drain current (a) v ds ? drain-to-source voltage (v) c ? capacitance (pf) r ds(on) ) v gs ? transconductance (s) g fs 0 20 40 60 80 100 02468 1 0 0 4 8 12 16 20 0 1 53 0456075 0.00 0.01 0.02 0.03 0.04 0 2 04 06080100 0 20 40 60 80 100 01234 567 ? 55 c t c = 125 c v ds = 10 v i d = 40 a v gs = 10 thru 7 v 5 v v gs = 10 v t c = ? 55 c 25 c 125 c c os s c is s i d ? drain current (a) 6 v 25 c c rss 3, 4 v www.din-tek.jp dt u 40 n0 6
4 typical characteristics (25 c unless noted) 0.0 0.4 0.8 1.2 1.6 2.0 2.4 ? 50 ? 25 0 25 50 75 100 125 150 175 on-resistance vs. junction t emperature source-drain diode forward voltage t j ? junction temperature ( c) v sd ? source-to-drain voltage (v) ? source current (a) i s 100 1 0.01 0.3 0.6 0.9 1.2 v gs = 10 v i d = 40 a 0 0.1 10 t j = 25 c t j = 150 c r ds( on) ? on-resiistance (normalized) thermal ratings safe operating area v ds ? drain-to-source voltage (v) ? drain current (a) i d 10 0.1 0.1 1 10 100 limited by r ds ( on) 1 1000 normalized thermal transient impedance, junction-to-case square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 11 0 normalized effective t ransient thermal impedance maximum avalanche drain current vs. case t emperature t c ? case temperature ( c) ? drain current (a) i d 0 10 20 30 40 50 0 25 50 75 100 125 150 175 0.2 0.1 duty cycle = 0.5 10 ms 100 ms 1 s, dc 30 100 s 10 s 1 ms 0.05 0.02 single pulse 100 t c = 25 c single pulse www.din-tek.jp dt u 40 n0 6
1 to-252aa case outline note ? dim en sion l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters inches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note rec ommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) application note www.din-tek.jp
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